Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements

Author

Gassler, C. ; Ziegler, V. ; Wolk, C. ; Deufel, R. ; Berlec, F.-J. ; Kab, N. ; Kohn, E.

Author_Institution

Res. Centre Ulm, DaimlerChrysler AG, Ulm, Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

182

Lastpage

185

Abstract

This paper reports on 43%-In metamorphic HFETs on GaAs with an InP-subchannel. To our knowledge, this is the first time that InP-subchannels have been used in metamorphic HFETs. The used gate length is 150 nm. The composite-channel of the devices was designed to overcome the high impact ionization rate in InGaAs while maintaining the very high mobility for a low turnon resistance. The devices show excellent RF-performance: f/sub max/=300 GHz and f/sub t/=188 GHz. DC-performance: I/sub DS,max/=625 mA/mm with transconductance g/sub max/=850 ms/mm.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; impact ionisation; indium compounds; millimetre wave field effect transistors; 150 nm; 188 GHz; 300 GHz; DC-performance; III-V semiconductors; InP-InGaAs; RF-performance; composite-channel; gate length; impact ionization rate; metamorphic HFETs; mobility; subchannels; turnon resistance; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Ionization; Lattices; MODFETs; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904288

Filename

904288