DocumentCode
2884911
Title
Nonlinear terahertz response of n-Type GaAs
Author
Gaal, P. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R. ; Ploog, K.H.
Author_Institution
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Nonlinear propagation experiments with intense THz pulses on n-type GaAs show even at room temperature coherent polarizations with lifetimes of more than 1 ps contrary to the predictions of Drude theory.
Keywords
III-V semiconductors; gallium arsenide; terahertz wave spectra; Drude theory predictions; GaAs; intense terahertz pulse; n-type gallium arsenide; nonlinear propagation experiments; nonlinear terahertz response; room temperature coherent polarizations; temperature 293 K to 298 K; Absorption; Doping; Frequency; Gallium arsenide; Infrared spectra; Nonlinear optics; Optical scattering; Oscillators; Polarization; Temperature; (190.5970) Semiconductor nonlinear optics including MQW; (300.6270) Spectroscopy, far infrared;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4629056
Filename
4629056
Link To Document