Reliability of low temperature poly-Si TFT employing counter-doped lateral body terminal

Author

Yoo, J.S. ; Kim, C.H. ; Lee, M.C. ; Han, M.K. ; Kim, H.J.

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

217

Lastpage

220

Abstract

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

Keywords

CMOS integrated circuits; driver circuits; elemental semiconductors; laser beam annealing; reliability; silicon; stability; thin film transistors; AMLCD; counter-doped lateral body terminal; counter-polarity; drain junction; dynamic stress; high speed driving circuits; hot carrier effect; low temperature poly-Si TFT; peak lateral field; poly-Si driving circuits; reliability; stability; Active matrix liquid crystal displays; Circuit stability; Degradation; Electron traps; Fabrication; Immune system; Stress; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904296

Filename

904296