Time-varying low-frequency noise in InGaP/GaAs HBTs

Author

Sevimli, Oya ; Parker, Anthony E. ; Mahon, Simon J. ; Fattorini, Anthony P.

Author_Institution

Dept. of Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.

Keywords

III-V semiconductors; electric noise measurement; frequency-domain analysis; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phase noise; semiconductor device models; semiconductor device noise; InGaP-GaAs; InGaP-GaAs HBT; frequency-domain averaging; frequency-domain noise measurements; heterojunction bipolar transistors; phase noise; spectral density measurements; time-varying low-frequency noise; Density measurement; Frequency measurement; Heterojunction bipolar transistors; Noise measurement; Phase noise; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578956

Filename

6578956