Title :
V/sub th/ fluctuation induced by statistical variation of pocket dopant profile
Author :
Tanaka, T. ; Usuki, Tatsuya ; Futatsugi, T. ; Momiyama, Youichi ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
This paper studies effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation. A pocket profile significantly enhances V/sub th/ fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible. This is because pocket dopants shrink the area which controls V/sub th/.
Keywords :
MOSFET; doping profiles; ion implantation; semiconductor device measurement; semiconductor device models; statistical analysis; MOSFETs; halo profile; implantation process variations; pocket dopant profile; statistical variation; threshold voltage fluctuation; Boron; Capacitance-voltage characteristics; FETs; Fluctuations; Gaussian distribution; Inverse problems; Laboratories; MOSFET circuits; Size control;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904309
