Title :
Role of long-range and short-range Coulomb potentials in threshold characteristics under discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs
Author :
Sano, N. ; Matsuzawa, K. ; Mukai, M. ; Nakayama, N.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
We investigate the Coulomb potential associated with discrete dopants in sub-0.1 /spl mu/m Si-MOSFETs from the physical viewpoint. It is found that the discrimination of the Coulomb potential between the long-range and short-range parts is essential in correctly simulating the device characteristics under nonuniform discrete dopants. A new dopant model appropriate for the 3D drift-diffusion (DD) simulations is proposed and it is demonstrated that the present model could properly take into account the threshold voltage variations in sub-0.1 /spl mu/m MOSFETs.
Keywords :
MOSFET; diffusion; doping profiles; electric potential; elemental semiconductors; semiconductor device models; silicon; 3D drift-diffusion simulations; MOSFETs; Si; device characteristics simulation; discrete dopants; dopant model; long-range Coulomb potentials; nonuniform discrete dopants; short-range Coulomb potentials; threshold characteristics; threshold voltage variations; Electric potential; MOSFETs; Microscopy; Physics; Poisson equations; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904310
