DocumentCode
2885262
Title
Quantum effects along the channel of ultra-scaled Si-based MOSFETs?
Author
Wanqiang Chen ; Qiqing Ouyang ; Register, L.F. ; Banerjee, S.K.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
291
Lastpage
294
Abstract
Quantum transport simulations along the channels of ultrascaled Si and SiGe heterostructure MOSFETs suggest that semiclassical models may remain reliable within the channel down to roughly 10 nm and perhaps beyond. However, quantum mechanical effects on injection into the channel in SiGe devices may be important even in relatively long channel devices.
Keywords
Ge-Si alloys; MOSFET; digital simulation; elemental semiconductors; quantum interference phenomena; semiconductor device models; semiconductor materials; silicon; 10 nm; Si; SiGe; channel injection; heterostructure MOSFETs; long channel devices; quantum mechanical effects; quantum transport simulations; semiclassical models; ultra-scaled Si-based MOSFETs; Analytical models; Germanium silicon alloys; Interference; MOSFET circuits; Microelectronics; Optical reflection; Optical scattering; Particle scattering; Relativistic quantum mechanics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904314
Filename
904314
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