Title :
Quantum effects along the channel of ultra-scaled Si-based MOSFETs?
Author :
Wanqiang Chen ; Qiqing Ouyang ; Register, L.F. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Quantum transport simulations along the channels of ultrascaled Si and SiGe heterostructure MOSFETs suggest that semiclassical models may remain reliable within the channel down to roughly 10 nm and perhaps beyond. However, quantum mechanical effects on injection into the channel in SiGe devices may be important even in relatively long channel devices.
Keywords :
Ge-Si alloys; MOSFET; digital simulation; elemental semiconductors; quantum interference phenomena; semiconductor device models; semiconductor materials; silicon; 10 nm; Si; SiGe; channel injection; heterostructure MOSFETs; long channel devices; quantum mechanical effects; quantum transport simulations; semiclassical models; ultra-scaled Si-based MOSFETs; Analytical models; Germanium silicon alloys; Interference; MOSFET circuits; Microelectronics; Optical reflection; Optical scattering; Particle scattering; Relativistic quantum mechanics; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904314
