Title :
Single-electron pass-transistor logic: operation of its elemental circuit
Author :
Ono, Y. ; Takahashi, Y.
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
Abstract :
An elemental circuit for single-electron pass-transistor logic is fabricated on a silicon-on-insulator substrate. The circuit consists of two nearly-identical single-electron transistors, each with an individual input gate. By inputting pass signals to the sources and complementary signals to the gates, basic logic operations, including half sum and carry out of the half adder, are successfully achieved at 25 K. This is an experimental demonstration of an arithmetic operation by single-electron transistors.
Keywords :
MOS logic circuits; adders; integrated circuit measurement; large scale integration; oxidation; silicon-on-insulator; single electron transistors; 25 K; Si; arithmetic operation; carry out; complementary signals; half adder; half sum; pass signals; silicon-on-insulator substrate; single-electron pass-transistor logic; Capacitance; Equivalent circuits; Fabrication; Insulation; Logic circuits; Oxidation; Silicon on insulator technology; Single electron transistors; Voltage; Wire;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904315