DocumentCode
2885280
Title
Single-electron pass-transistor logic: operation of its elemental circuit
Author
Ono, Y. ; Takahashi, Y.
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
297
Lastpage
300
Abstract
An elemental circuit for single-electron pass-transistor logic is fabricated on a silicon-on-insulator substrate. The circuit consists of two nearly-identical single-electron transistors, each with an individual input gate. By inputting pass signals to the sources and complementary signals to the gates, basic logic operations, including half sum and carry out of the half adder, are successfully achieved at 25 K. This is an experimental demonstration of an arithmetic operation by single-electron transistors.
Keywords
MOS logic circuits; adders; integrated circuit measurement; large scale integration; oxidation; silicon-on-insulator; single electron transistors; 25 K; Si; arithmetic operation; carry out; complementary signals; half adder; half sum; pass signals; silicon-on-insulator substrate; single-electron pass-transistor logic; Capacitance; Equivalent circuits; Fabrication; Insulation; Logic circuits; Oxidation; Silicon on insulator technology; Single electron transistors; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904315
Filename
904315
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