• DocumentCode
    2885280
  • Title

    Single-electron pass-transistor logic: operation of its elemental circuit

  • Author

    Ono, Y. ; Takahashi, Y.

  • Author_Institution
    NTT Basic Res. Labs., Kanagawa, Japan
  • fYear
    2000
  • fDate
    10-13 Dec. 2000
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    An elemental circuit for single-electron pass-transistor logic is fabricated on a silicon-on-insulator substrate. The circuit consists of two nearly-identical single-electron transistors, each with an individual input gate. By inputting pass signals to the sources and complementary signals to the gates, basic logic operations, including half sum and carry out of the half adder, are successfully achieved at 25 K. This is an experimental demonstration of an arithmetic operation by single-electron transistors.
  • Keywords
    MOS logic circuits; adders; integrated circuit measurement; large scale integration; oxidation; silicon-on-insulator; single electron transistors; 25 K; Si; arithmetic operation; carry out; complementary signals; half adder; half sum; pass signals; silicon-on-insulator substrate; single-electron pass-transistor logic; Capacitance; Equivalent circuits; Fabrication; Insulation; Logic circuits; Oxidation; Silicon on insulator technology; Single electron transistors; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-6438-4
  • Type

    conf

  • DOI
    10.1109/IEDM.2000.904315
  • Filename
    904315