DocumentCode
2885354
Title
A CAD-oriented non-quasistatic MOSFET model for transient analysis
Author
Turchetti, Claudio ; Masetti, Guido ; Mancini, P.
Author_Institution
University of Ancona, Ancona, Italy
Volume
XXIX
fYear
1986
fDate
19-21 Feb. 1986
Firstpage
162
Lastpage
163
Abstract
A comparison of the step response of a MOSFET predicted by a simplified non-quasistatic model with the results of detailed numerical simulations will be presented. The sources of error will be detailed. The model afforded greater efficiency in circuit simulation.
Keywords
Circuit simulation; Delay effects; Electrons; MOSFET circuits; Nonlinear equations; Numerical analysis; Predictive models; SPICE; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location
Anaheim, CA, USA
Type
conf
DOI
10.1109/ISSCC.1986.1156979
Filename
1156979
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