Title :
A CAD-oriented non-quasistatic MOSFET model for transient analysis
Author :
Turchetti, Claudio ; Masetti, Guido ; Mancini, P.
Author_Institution :
University of Ancona, Ancona, Italy
Abstract :
A comparison of the step response of a MOSFET predicted by a simplified non-quasistatic model with the results of detailed numerical simulations will be presented. The sources of error will be detailed. The model afforded greater efficiency in circuit simulation.
Keywords :
Circuit simulation; Delay effects; Electrons; MOSFET circuits; Nonlinear equations; Numerical analysis; Predictive models; SPICE; Transient analysis; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/ISSCC.1986.1156979
