The design of dielectric resonator VCO

Author

Hui, Geng ; Li, K.C. ; Liu, P.C.K.

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech., Kowloon, Hong Kong

fYear

1991

fDate

16-17 Jun 1991

Firstpage

399

Abstract

Two design methods are presented which result in a simple, low-cost and highly stable L-band VCO. One method uses microwave transistors and a high dielectric constant microstrip line which couples with DR. The frequency tuning range of the oscillator is more than 0.5% using this method. The other design method is based on the C-band Self-Oscillation Mixer (SOM) since the L-band DR is too large to use on the one hand. On the other hand, the Q-factor of the DR with the relative dielectric constant of 80 is much lower than that in normal use. The C-band DR is found to be suitable in this case. The L-band VCO consists of two C-band DROs. The L-band output frequency is the frequency difference of the two DROs. This design has the advantages of good frequency stability and relatively large tuning range (2%)

Keywords

dielectric resonators; frequency stability; microwave oscillators; nonlinear network synthesis; solid-state microwave circuits; tuning; variable-frequency oscillators; C-band self-oscillation mixer; L-band DRO oscillator; L-band output frequency; Q-factor; design methods; dielectric resonator VCO; frequency stability; frequency tuning range; high dielectric constant microstrip line; microwave transistors; Design methodology; Frequency; High-K gate dielectrics; L-band; Microstrip; Microwave oscillators; Microwave theory and techniques; Microwave transistors; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991. Conference Proceedings, China., 1991 International Conference on

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/CICCAS.1991.184372

Filename

184372