Deuterium effect on interface states and SILC generation in CHE stress conditions: A comparative study

Author

Esseni, David ; Bude, J.D. ; Selmi, L.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

339

Lastpage

342

Abstract

This paper investigates the generation of interface states (N/sub it/) and stress induced leakage current (SILC) in the stress regime of channel hot electrons (CHE) and the possible beneficial effect of deuterium annealing. Our results show that no isotope effect is observed on SILC even when a large isotope effect is simultaneously observed on N/sub it/. The generation of SILC seems to be always correlated to hot holes injection (HHI) whereas two different generation mechanisms for N/sub it/ can be identified.

Keywords

MOSFET; annealing; hot carriers; hot electron transistors; interface states; leakage currents; CHE stress conditions; D; D/sub 2/ annealing effects; SILC generation; channel hot electrons; comparative study; generation mechanisms; hot holes injection; interface states; isotope effect; n-MOS transistors; stress induced leakage current; stress regime; Annealing; Channel hot electron injection; Character generation; Deuterium; Hot carriers; Hydrogen; Interface states; Isotopes; Probes; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904325

Filename

904325