Title :
Highly reliable gate oxide under Fowler-Nordheim electron injection by deuterium pyrogenic oxidation and deuterated poly-Si deposition
Author :
Mitani, Y. ; Satake, H. ; Itoh, H. ; Toriumi, A.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
This paper reports on the realization of highly reliable deuterated oxide by deuterium pyrogenic oxidation and poly-Si deposition using deuterated monosilane gas (SiD/sub 4/). The properties of these deuterated oxides are compared with those of deuterium-annealed oxide. It is concluded that the improvement of the gate oxide reliability by a deuterium incorporation is dependent on the method whereby deuterium is incorporated into gate oxide film and that deuterium atoms, which are incorporated into both Si/SiO/sub 2/ interface and bulk-SiO/sub 2/ by the oxidation and poly-Si deposition, play an important role in the suppression of electron trap creation under Fowler-Nordheim (F-N) stress.
Keywords :
MOSFET; chemical vapour deposition; electron traps; elemental semiconductors; hot carriers; interface states; leakage currents; oxidation; semiconductor device reliability; silicon; silicon compounds; Fowler-Nordheim electron injection; MOSFETs; Si-SiO/sub 2/; SiD/sub 4/; deuterated monosilane gas; electron trap creation suppression; gate oxide film; gate oxide reliability; hot carriers; leakage currents; polysilicon deposition; pyrogenic oxidation; Annealing; Deuterium; Electrodes; Electrons; Hydrogen; Large scale integration; MOS capacitors; MOSFETs; Oxidation; Stress;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904326
