Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology

Author

Jeong, H.S. ; Yang, W.S. ; Hwang, Y.S. ; Cho, C.H. ; Park, S. ; Ahn, S.J. ; Chun, Y.S. ; Shin, S.H. ; Song, S.H. ; Lee, Jonathan Y. ; Jang, S.M. ; Lee, C.H. ; Jeong, J.H. ; Cho, M.H. ; Lee, Jung Keun ; Kinam Kim

Author_Institution

Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi, South Korea

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

353

Lastpage

356

Abstract

4 Gb DRAM has been developed successfully using 0.11 /spl mu/m DRAM technology. Considering manufacturability, we have focused on developing patterning technology that makes 0.11 /spl mu/m design rules possible using KrF lithography. Also, novel DRAM technologies, which have a big influence on the future DRAM integration, are developed as follows:, using novel oxide (SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.

Keywords

DRAM chips; VLSI; chemical vapour deposition; integrated circuit metallisation; photolithography; 0.11 micron; 4 Gbit; Al; CVD; DRAM; KrF; SOG; borderless metal contact; gap-filling; line-type storage node; manufacturability; metal interconnections; patterning technology; photolithography; stud processes; thin gate oxide; Annealing; Etching; Filling; Lithography; Manufacturing; Optical interconnections; Random access memory; Research and development; Scattering; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904328

Filename

904328