Title :
Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology
Author :
Jeong, H.S. ; Yang, W.S. ; Hwang, Y.S. ; Cho, C.H. ; Park, S. ; Ahn, S.J. ; Chun, Y.S. ; Shin, S.H. ; Song, S.H. ; Lee, Jonathan Y. ; Jang, S.M. ; Lee, C.H. ; Jeong, J.H. ; Cho, M.H. ; Lee, Jung Keun ; Kinam Kim
Author_Institution :
Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi, South Korea
Abstract :
4 Gb DRAM has been developed successfully using 0.11 /spl mu/m DRAM technology. Considering manufacturability, we have focused on developing patterning technology that makes 0.11 /spl mu/m design rules possible using KrF lithography. Also, novel DRAM technologies, which have a big influence on the future DRAM integration, are developed as follows:, using novel oxide (SOG) for the enhanced capability of gap-filling, borderless metal contact and stud processes, line-type storage node SAC, thin gate oxide, and CVD Al process for metal interconnections.
Keywords :
DRAM chips; VLSI; chemical vapour deposition; integrated circuit metallisation; photolithography; 0.11 micron; 4 Gbit; Al; CVD; DRAM; KrF; SOG; borderless metal contact; gap-filling; line-type storage node; manufacturability; metal interconnections; patterning technology; photolithography; stud processes; thin gate oxide; Annealing; Etching; Filling; Lithography; Manufacturing; Optical interconnections; Random access memory; Research and development; Scattering; Semiconductor device manufacture;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904328
