Temperature dependence of LF noise in UTBB nMOSFETs

Author

Dos Santos, Sara D. ; Martino, Joao Antonio ; Aoulaiche, Marc ; Jurczak, Malgorzata ; Simoen, Eddy ; Claeys, Cor

Author_Institution

Dept. of Electron. Syst., PSI Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

The temperature influence on the low frequency noise performance has been investigated in Ultra-Thin Body and BOX (UTBB) nMOSFETs, with emphasis on the Lorentzian components. An Arrhenius analysis of the shift of the peak of the frequency versus the current noise power spectral density provides information on the underlying generation-recombination (GR) centers, whether they are positioned in the silicon film or in the top or bottom dielectric layer. Here, trap energy levels around 0.03 eV to 0.24 eV and cross-sections of 1×10^-17 to 1×10^-19 cm² have been found, whereby the higher activation energies are found for the traps associated with the buried oxide.

Keywords

MOSFET; Arrhenius analysis; GR centers; LF noise; Lorentzian components; UTBB nMOSFET; activation energies; bottom dielectric layer; buried oxide; generation-recombination centers; low frequency noise performance; noise power spectral density; silicon film; temperature dependence; top dielectric layer; trap energy levels; ultra-thin body and box transistors; Electron traps; Films; Low-frequency noise; MOSFET; Silicon; Temperature measurement; MOSFET; UTBB; activation energy; low-frequency noise; trap cross-section;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578980

Filename

6578980