• DocumentCode
    2885553
  • Title

    A millimeter waveband monolithic limiter

  • Author

    Grigoryev, A.D. ; Kirillov, A.V. ; Usov, A.A.

  • Author_Institution
    St.-Petersburg State Electrotech. Univ., St. Petersburg, Russia
  • fYear
    2010
  • fDate
    22-23 Sept. 2010
  • Firstpage
    128
  • Lastpage
    133
  • Abstract
    Design of a millimeter waveband limiter for low-noise amplifiers is presented. The limiter base elements are monolithic GaAs p-i-n diode matrices. The device provides amplifier availability up to m30 W input power at no more than 10 mW leaked power.
  • Keywords
    III-V semiconductors; gallium arsenide; low noise amplifiers; microwave limiters; p-i-n diodes; GaAs; LNA; low-noise amplifiers; millimeter waveband monolithic limiter; power 30 W; Availability; Electronic mail; Gallium arsenide; Low-noise amplifiers; P-i-n diodes; PIN photodiodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering (APEDE), 2010 International Conference on
  • Conference_Location
    Saratov
  • Print_ISBN
    978-1-4244-6954-3
  • Type

    conf

  • DOI
    10.1109/APEDE.2010.5624033
  • Filename
    5624033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2885553