DocumentCode :
2885672
Title :
1/F noise in TiAu/SiO2/GaAs Schottky diodes
Author :
Klyuev, Alexey V. ; Shmelev, Evgeny I. ; Yakimov, Arkady V.
Author_Institution :
Radiophys. Fac., Lobachevsky State Univ., Nizhny Novgorod, Russia
fYear :
2013
fDate :
24-28 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
The model of Schottky diode is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Il are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of 1/f noise in leakage current is suggested.
Keywords :
1/f noise; III-V semiconductors; Schottky diodes; gallium arsenide; leakage currents; semiconductor device models; silicon compounds; titanium compounds; 1/f noise; Schottky diodes; TiAu-SiO2-GaAs; current-voltage characteristics; leakage current; series resistance Rb; Current-voltage characteristics; Integrated circuit modeling; Junctions; Leakage currents; Noise; Resistance; Schottky diodes; 1/f noise; Schottky diode; current-voltage characteristic; leakage current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
Type :
conf
DOI :
10.1109/ICNF.2013.6578990
Filename :
6578990
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2885672
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