• DocumentCode
    2885672
  • Title

    1/F noise in TiAu/SiO2/GaAs Schottky diodes

  • Author

    Klyuev, Alexey V. ; Shmelev, Evgeny I. ; Yakimov, Arkady V.

  • Author_Institution
    Radiophys. Fac., Lobachevsky State Univ., Nizhny Novgorod, Russia
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The model of Schottky diode is suggested. This one is aimed for the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance Rb of base and contacts, and the possible leakage Il are taken into account. Parameters of the diode are defined from the analysis of the current-voltage characteristic. For an explanation of experimental data the model of 1/f noise in leakage current is suggested.
  • Keywords
    1/f noise; III-V semiconductors; Schottky diodes; gallium arsenide; leakage currents; semiconductor device models; silicon compounds; titanium compounds; 1/f noise; Schottky diodes; TiAu-SiO2-GaAs; current-voltage characteristics; leakage current; series resistance Rb; Current-voltage characteristics; Integrated circuit modeling; Junctions; Leakage currents; Noise; Resistance; Schottky diodes; 1/f noise; Schottky diode; current-voltage characteristic; leakage current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578990
  • Filename
    6578990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2885672