DocumentCode :
2885694
Title :
Development of a wide tuning range MEMS tunable capacitor for wireless communication systems
Author :
Jun Zou ; Chang Liu ; Schutt-Aine, J. ; Jinghong Chen ; Sung-Mo Kang
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
403
Lastpage :
406
Abstract :
We present results on the development of a novel micromachined parallel-plate tunable capacitor with a wide tuning range. Different from conventional two-parallel-plate tunable capacitors, this novel tunable capacitor consists of one suspended top plate and two fixed bottom plates. One of the two fixed plates and the top plate form a variable capacitor, where as the other fixed plate and the top plate are used to provide electrostatic actuation for capacitance tuning. For the fabricated prototype tunable capacitors, a maximum controllable tuning range of 69.8% has been achieved experimentally, exceeding the theoretical tuning range limit (50%) of conventional two-parallel-plate tunable capacitors. This novel tunable capacitor also exhibits very low return loss (<0.6 dB between 45 MHz and 10 GHz). Its fabrication process is completely compatible with the existing standard IC fabrication technology, which makes it useful in integrated wireless communication systems.
Keywords :
S-parameters; capacitors; circuit tuning; micromachining; micromechanical devices; radio equipment; 0.6 dB; 45 MHz to 10 GHz; MEMS tunable capacitor; capacitance tuning; electromechanical simulation; electrostatic actuation; fixed bottom plates; micromachined parallel-plate tunable capacitor; scattering parameter; surface micromachining; suspended top plate; variable capacitor; very low return loss; wide tuning range; wireless communication systems; Capacitors; Circuit optimization; Electrostatic actuators; Fabrication; Integrated circuit technology; Micromechanical devices; Radio frequency; Tunable circuits and devices; Tuning; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904341
Filename :
904341
Link To Document :
بازگشت