Title :
High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT
Author :
Liu, H.Z. ; Huang, H.K. ; Wang, C.C. ; Wang, Y.H. ; Chang, C.H. ; Wu, W. ; Wu, C.L. ; Chang, C.S.
Author_Institution :
Inst. of Microelectron., Nat. Cheng-Kung Univ., Tainan, Taiwan
Abstract :
A high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AIGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm PldB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with Π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF power amplifiers; aluminium compounds; cellular radio; gallium arsenide; indium compounds; personal communication networks; transceivers; 1.9 GHz; 10 V; 12.5 dB; 3.8 A; 50 mm; 500 mW; AlGaAs-InGaAs-GaAs; DQPSK signal; PHEMT; PHS base station; amplifier sub-system; bias condition; high linearity power amplifier; personal handyphone system; Assembly; Base stations; Costs; Gallium arsenide; High power amplifiers; Indium gallium arsenide; Linearity; PHEMTs; Packaging; Power amplifiers;
Conference_Titel :
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8660-4
DOI :
10.1109/APCCAS.2004.1412702
