DocumentCode
2885948
Title
An experimental 4Mb CMOS DRAM
Author
Furuyama, Toshiya ; Ohsawa, Takashi ; Watanabe, Yoshihiro ; Ishiuchi, H. ; Tanaka, T. ; Ohuchi, Kouji ; Tango, H. ; Natori, K. ; Ozawa, O.
Author_Institution
Toshiba Semiconductor Device Engineering Laboratory/VLSI Reseach Center, Kawasaki, Japan
Volume
XXIX
fYear
1986
fDate
19-21 Feb. 1986
Firstpage
272
Lastpage
273
Keywords
CMOS process; CMOS technology; Capacitance; Capacitors; Circuit noise; Circuit testing; Random access memory; Read-write memory; Very large scale integration; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International
Conference_Location
Anaheim, CA, USA
Type
conf
DOI
10.1109/ISSCC.1986.1157013
Filename
1157013
Link To Document