DocumentCode
2885972
Title
How to measure intrinsic low frequency noise in thin film samples?
Author
Wu, Shiqian ; Guillet, B. ; Mechin, L. ; Routoure, J.-M.
Author_Institution
GREYC, Univ. de Caen Basse, Caen, France
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
3
Abstract
The measurement of low frequency noise can be considered as an important part in optimization of sensor noise-signal ratio. But sometimes, the intrinsic low frequency noise is affected by contact noise, which can be generated by geometrical defect of thin film. Thus, the measured noise level could not reveal material properties. We report different low frequency noise measurement methods in a general geometry sample of thin film. A detailed analysis of noise measurement has been described by relative equations. Finally, a discussion has been investigated in systematic measurements of low frequency noise at room temperature in La0.7Sr0.3MnO3(LSMO) thin films and noise measurements are presented by noise spectral densities as function of frequency.
Keywords
electric noise measurement; electric sensing devices; lanthanum compounds; optimisation; strontium compounds; thin films; LSMO thin films; La0.7Sr0.3MnO3; contact noise; intrinsic low frequency noise; noise measurement; noise spectral density; optimization; sensor noise-signal ratio; temperature 293 K to 298 K; Current measurement; Frequency measurement; Materials; Noise; Noise measurement; Probes; Voltage measurement; low frequency 1/f noise; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6579004
Filename
6579004
Link To Document