• DocumentCode
    2885972
  • Title

    How to measure intrinsic low frequency noise in thin film samples?

  • Author

    Wu, Shiqian ; Guillet, B. ; Mechin, L. ; Routoure, J.-M.

  • Author_Institution
    GREYC, Univ. de Caen Basse, Caen, France
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The measurement of low frequency noise can be considered as an important part in optimization of sensor noise-signal ratio. But sometimes, the intrinsic low frequency noise is affected by contact noise, which can be generated by geometrical defect of thin film. Thus, the measured noise level could not reveal material properties. We report different low frequency noise measurement methods in a general geometry sample of thin film. A detailed analysis of noise measurement has been described by relative equations. Finally, a discussion has been investigated in systematic measurements of low frequency noise at room temperature in La0.7Sr0.3MnO3(LSMO) thin films and noise measurements are presented by noise spectral densities as function of frequency.
  • Keywords
    electric noise measurement; electric sensing devices; lanthanum compounds; optimisation; strontium compounds; thin films; LSMO thin films; La0.7Sr0.3MnO3; contact noise; intrinsic low frequency noise; noise measurement; noise spectral density; optimization; sensor noise-signal ratio; temperature 293 K to 298 K; Current measurement; Frequency measurement; Materials; Noise; Noise measurement; Probes; Voltage measurement; low frequency 1/f noise; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6579004
  • Filename
    6579004