Title :
A micromachining post-process module for RF silicon technology
Author :
Pham, N.P. ; Ng, K.T. ; Bartek, M. ; Sarro, P.M. ; Rejaei, B. ; Burghartz, J.N.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
Abstract :
A bulk-micromachining post-process module, based on two-level structuring of RF silicon substrates and a 4-/spl mu/m thick one-level sub-surface metal pattern, is presented. This allows for fabricating three-dimensional structures for novel RF components and has potential in more compact integration. Next to a concise description of the relevant aspects of the fabrication process, mechanical stability of the postprocessed wafers is analyzed. Sub-surface spiral inductors with good quality and low coupling to inductors built at the wafer surface are presented, thus demonstrating the feasibility of three-dimensional integration of RF components.
Keywords :
MMIC; UHF integrated circuits; crosstalk; elemental semiconductors; etching; inductors; isolation technology; mechanical stability; micromachining; microstrip lines; silicon; transceivers; 4 micron; RF components; Si-SiO-SiN; bulk-micromachining post-process module; coupling; mechanical stability; one-level sub-surface metal pattern; postprocessed wafers; spiral inductors; three-dimensional structures; two-level structuring; Crosstalk; Etching; Fabrication; Inductors; Micromachining; Microstrip; Radio frequency; Resists; Silicon compounds; Spirals;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904360
