DocumentCode
2886062
Title
Electron energy relaxation in wurtzite ZnO and GaN
Author
Sermuksnis, Emilis ; Ramonas, Mindaugas ; Liberis, Juozapas ; Matulionis, A. ; Avrutin, V. ; Liu, Hongying ; Izyumskaya, N. ; Ozgur, U. ; Morkoc, H.
Author_Institution
Center for Phys. Sci. & Technol. Vilnius, Semicond. Phys. Inst., Vilnius, Lithuania
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
4
Abstract
Experimental data and Monte-Carlo modeling of hot-electron fluctuations are used for investigation of hot-electron energy relaxation in donor-doped bulk wurtzite ZnO and GaN subjected to a pulsed dc. The extracted electron energy relaxation time depends on the electron density. The experimental value of 0.84 ps is obtained at 5.5×1017 cm-3 in a reasonably good agreement with the results reported from time-resolved optical measurements. The relaxation becomes faster at a lower electron density where the optical data are not available. The density dependence is discussed in the frame of hot-phonon effect.
Keywords
II-VI semiconductors; III-V semiconductors; Monte Carlo methods; carrier relaxation time; electron density; gallium compounds; hot carriers; wide band gap semiconductors; zinc compounds; GaN; Monte Carlo modeling; ZnO; electron density; hot electron energy relaxation; hot electron fluctuations; hot phonon effect; pulsed dc; time-resolved optical measurements; wurtzite GaN; wurtzite ZnO; Gallium nitride; Monte Carlo methods; Optical scattering; Phonons; Temperature measurement; Ultrafast optics; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6579008
Filename
6579008
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