• DocumentCode
    2886062
  • Title

    Electron energy relaxation in wurtzite ZnO and GaN

  • Author

    Sermuksnis, Emilis ; Ramonas, Mindaugas ; Liberis, Juozapas ; Matulionis, A. ; Avrutin, V. ; Liu, Hongying ; Izyumskaya, N. ; Ozgur, U. ; Morkoc, H.

  • Author_Institution
    Center for Phys. Sci. & Technol. Vilnius, Semicond. Phys. Inst., Vilnius, Lithuania
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Experimental data and Monte-Carlo modeling of hot-electron fluctuations are used for investigation of hot-electron energy relaxation in donor-doped bulk wurtzite ZnO and GaN subjected to a pulsed dc. The extracted electron energy relaxation time depends on the electron density. The experimental value of 0.84 ps is obtained at 5.5×1017 cm-3 in a reasonably good agreement with the results reported from time-resolved optical measurements. The relaxation becomes faster at a lower electron density where the optical data are not available. The density dependence is discussed in the frame of hot-phonon effect.
  • Keywords
    II-VI semiconductors; III-V semiconductors; Monte Carlo methods; carrier relaxation time; electron density; gallium compounds; hot carriers; wide band gap semiconductors; zinc compounds; GaN; Monte Carlo modeling; ZnO; electron density; hot electron energy relaxation; hot electron fluctuations; hot phonon effect; pulsed dc; time-resolved optical measurements; wurtzite GaN; wurtzite ZnO; Gallium nitride; Monte Carlo methods; Optical scattering; Phonons; Temperature measurement; Ultrafast optics; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6579008
  • Filename
    6579008