DocumentCode
2886121
Title
A new model for {311} defects based on in situ measurements
Author
Law, M.E. ; Jones, K.S.
Author_Institution
Florida Univ., Gainesville, FL, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
511
Lastpage
514
Abstract
This paper introduces a new model for the {311} defect. The {311} defect is a key component of transient enhanced diffusion. This model is based on in-situ TEM annealing of defects. In-situ evidence suggests that there is no length dependence of the {311} defect evolution. Dissolution of the ensemble does, however, show a dependence on length since the defect loss rate is proportional to the number of defects. Defect nucleation is heterogeneous on clusters that result from the implant.
Keywords
annealing; diffusion; elemental semiconductors; extended defects; ion implantation; silicon; transmission electron microscopy; Si; annealing; dissolution; in situ TEM measurement; ion implantation; nucleation; silicon wafer; transient enhanced diffusion; {311} defect; Annealing; Bars; Furnaces; Implants; Kinetic theory; Monitoring; Semiconductor device modeling; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904367
Filename
904367
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