DocumentCode :
2886121
Title :
A new model for {311} defects based on in situ measurements
Author :
Law, M.E. ; Jones, K.S.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
2000
fDate :
10-13 Dec. 2000
Firstpage :
511
Lastpage :
514
Abstract :
This paper introduces a new model for the {311} defect. The {311} defect is a key component of transient enhanced diffusion. This model is based on in-situ TEM annealing of defects. In-situ evidence suggests that there is no length dependence of the {311} defect evolution. Dissolution of the ensemble does, however, show a dependence on length since the defect loss rate is proportional to the number of defects. Defect nucleation is heterogeneous on clusters that result from the implant.
Keywords :
annealing; diffusion; elemental semiconductors; extended defects; ion implantation; silicon; transmission electron microscopy; Si; annealing; dissolution; in situ TEM measurement; ion implantation; nucleation; silicon wafer; transient enhanced diffusion; {311} defect; Annealing; Bars; Furnaces; Implants; Kinetic theory; Monitoring; Semiconductor device modeling; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
Type :
conf
DOI :
10.1109/IEDM.2000.904367
Filename :
904367
Link To Document :
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