DocumentCode
2886137
Title
Boron diffusion and activation in the presence of other species
Author
Hong-Jyh Li ; Kohli, P. ; Ganguly, S. ; Kirichenko, T.A. ; Zeitzoff, P. ; Torres, K. ; Banerjee, S.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
515
Lastpage
518
Abstract
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.
Keywords
ab initio calculations; boron; diffusion; elemental semiconductors; semiconductor doping; silicon; Si:B; ab initio model; boron activation; boron diffusion; semiconductor doping; shallow junction; silicon wafer; Annealing; Boron; Capacitive sensors; Chaos; Equations; Implants; Ion implantation; Microelectronics; Semiconductor devices; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904368
Filename
904368
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