DocumentCode :
2886180
Title :
A comparative analysis of computation methods of the power semiconductor diodes high harmonic spectrums
Author :
Davidovich, M.V. ; Kozlov, A.V.
Author_Institution :
Saratov State Univ., Saratov, Russia
fYear :
2010
fDate :
22-23 Sept. 2010
Firstpage :
464
Lastpage :
470
Abstract :
The comparison of LF and HF radio interference voltage levels, generated by power semiconductor diodes in alternating-current circuit, which were computed by different methods, have been carried out. The diode diffusion and barrier capacitance simulation had been fulfilled.
Keywords :
harmonic analysis; power semiconductor diodes; radiofrequency interference; spectral analysis; HF radio interference voltage levels; LF radio interference voltage levels; alternating-current circuit; barrier capacitance simulation; diode diffusion; high harmonic spectrums; power semiconductor diodes; Computational modeling; Electromagnetic interference; Electronic mail; Hafnium; Harmonic analysis; Integrated circuit modeling; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2010 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-6954-3
Type :
conf
DOI :
10.1109/APEDE.2010.5624067
Filename :
5624067
Link To Document :
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