Title :
The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
Author :
Alam, M.A. ; Weir, B.E. ; Silverman, P.J. ; Ma, Y. ; Hwang, D.
Author_Institution :
Lucent Technols. Bell Labs., Murray Hill, NJ, USA
Abstract :
Soft and hard breakdown result from the statistical distribution of the percolation conductance, rather than any physical difference between the traps involved. The distribution obtained confirms some subtle and surprising predictions of the percolation model and shows that the effective trap-diameter is less than 1.5 nm. It also demonstrates that 1.5 nm oxides at 1 V can not undergo hard breakdown.
Keywords :
electric breakdown; percolation; electric resistance; hard breakdown; percolation model; soft breakdown; statistical distribution; trap diameter; ultrathin oxide breakdown; Conductivity; Electric breakdown; Leakage current; MOSFETs; Microscopy; Power dissipation; Predictive models; Probes; Solid modeling; Statistical distributions;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904372
