Title :
Post soft breakdown conduction in SiO/sub 2/ gate oxides
Author :
Sune, J. ; Miranda, E.
Author_Institution :
Dept. d´Enginyeria Electronica, Univ. Autonoma de Barcelona, Spain
Abstract :
The post Soft Breakdown (SBD) conduction in ultra-thin SiO/sub 2/ films is studied using a Quantum Point Contact model which also applies to hard breakdown. The main experimental characteristics of the post-SBD conduction are correctly explained. The role of holes and electrons is also discussed.
Keywords :
electric breakdown; insulating thin films; quantum point contacts; silicon compounds; SiO/sub 2/; SiO/sub 2/ ultrathin film; electric conduction; gate oxide; quantum point contact model; soft breakdown; Breakdown voltage; Capacitors; Cathodes; Electric breakdown; Electrons; Gaussian distribution; Lead compounds; Shape; Stress; Substrates;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904373
