Title :
Design and simulation of differential active inductor with 0.18 um CMOS Technology
Author :
Rasouli, Komeil ; Nouri, Akram ; Sabaghi, Masoud ; Kordalivand, A.M. ; Far, Mahmoud Azmodeh
Author_Institution :
Laser & Opt. Res. Sch., NSTRI, Tehran, Iran
Abstract :
In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.
Keywords :
CMOS integrated circuits; field effect MMIC; inductance; inductors; microwave transistors; CMOS technology; RFCOMS transistor; advanced design system; differential active inductor; frequency 5 GHz; inductance; size 0.18 mum; voltage 1.8 V; Active filters; Active inductors; CMOS integrated circuits; CMOS technology; Resonant frequency; Transistors; ADS; RFCMOS; differential Active Inductor;
Conference_Titel :
System Engineering and Technology (ICSET), 2011 IEEE International Conference on
Conference_Location :
Shah Alam
Print_ISBN :
978-1-4577-1256-2
DOI :
10.1109/ICSEngT.2011.5993414
