DocumentCode
2886230
Title
Substrate hole current origin after oxide breakdown
Author
Rasras, M. ; De Wolf, I. ; Groeseneken, G. ; Degraeve, R. ; Maes, H.E.
Author_Institution
IMEC, Leuven, Belgium
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
537
Lastpage
540
Abstract
The origin of the substrate hole currents after oxide breakdown is investigated using photon emission microscopy and spectral analysis of light which is emitted from the breakdown spots. It is demonstrated that, under positive gate bias, impact ionization of the electrons in the substrate is the dominant source of the substrate hole current and the light emission.
Keywords
electric breakdown; impact ionisation; silicon compounds; SiO/sub 2/; gate oxide breakdown; impact ionization; light emission; photon emission microscopy; spectral analysis; substrate hole current; Anodes; Breakdown voltage; Charge carrier processes; Current measurement; Electric breakdown; Electron emission; MOSFET circuits; Microscopy; Spectral analysis; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904374
Filename
904374
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