Dephasing of polarons in InAs/GaAs self-assembled quantum dots

Author

Zibik, Evgeny A. ; Carpenter, Ben A. ; Wilson, Luke R. ; Cockburn, John W. ; Phillips, P. Jonathan ; Vinh, Nguyen Q. ; Steer, Matthew J. ; Hopkinson, Mark

Author_Institution

Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Polaron dephasing processes are investigated using far-infrared degenerate four wave mixing. Long (~80 ps) dephasing times are measured and a clear change from phonon-mediated to Auger-mediated dephasing is observed as the dot carrier population increases.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; polarons; semiconductor quantum dots; InAs-GaAs; auger-mediated dephasing; dot carrier; far-infrared degenerate four wave mixing; polarons pephasing; quantum dots; time 80 ps; Electron optics; Extraterrestrial measurements; Four-wave mixing; Gallium arsenide; Nonlinear optics; Optical mixing; Phonons; Quantum dots; Temperature dependence; Time measurement; (190.4380) Nonlinear optics, four-wave mixing; (190.7110) Ultrafast nonlinear optics; (300.2570) Four-wave mixing; (300.6290) Spectroscopy, four-wave mixing; (300.6530) Spectroscopy, ultrafast;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4629130

Filename

4629130