Title :
Extending the reliability scaling limit of SiO/sub 2/ through plasma nitridation
Author :
Nicollian, P.E. ; Baldwin, G.C. ; Eason, K.N. ; Grider, D.T. ; Hattangady, S.V. ; Hu, J.C. ; Hunter, W.R. ; Rodder, M. ; Rotondaro, A.L.P.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We demonstrate a manufacturable remote plasma nitridation process that significantly extends the reliability scaling limit of SiO/sub 2/ based gate dielectrics.
Keywords :
dielectric thin films; nitridation; plasma materials processing; reliability; silicon compounds; SiO/sub 2/; SiO/sub 2/ gate dielectric; reliability scaling limit; remote plasma nitridation; Design for quality; Dielectrics; Electric breakdown; Hydrogen; Leakage current; MOS devices; Nitrogen; Plasmas; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904376
