DocumentCode
2886303
Title
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Author
Kaczer, B. ; Degraeve, R. ; Groeseneken, G. ; Rasras, M. ; Kubicek, S. ; Vandamme, E. ; Badenes, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
553
Lastpage
556
Abstract
We demonstrate that many gate oxide breakdowns can occur in parts of a digital circuit without affecting its overall logical function. This implies that if maintaining the circuit´s logical functionality is the sufficient reliability criterion, the present reliability specifications are excessively stringent.
Keywords
MOSFET; MOSFET circuits; logic circuits; semiconductor device breakdown; semiconductor device reliability; MOSFET; digital circuit; gate oxide breakdown; logic function; reliability; CMOS technology; Dielectric breakdown; Digital circuits; Electric breakdown; FETs; Frequency conversion; MOSFET circuits; Maintenance; Ring oscillators; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904379
Filename
904379
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