High temperature operated (/spl sim/250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

Author

Shiang-Feng Tang ; Shih-Yen Lin ; Si-Chen Lee ; Chieh Hsiung Kuan ; Ya-Tung Cherng

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

597

Lastpage

600

Abstract

The 10 stacked self-assembled InAs/GaAs quantum dot infrared photodetector (QDIP) operated in 2.5 to 7 /spl mu/m range by photovoltaic (PV) and photoconductive (PC) mixed-mode near room temperature (/spl sim/250 K) was demonstrated. The specific peak detectivity D* is 2.4/spl times/10/sup 8/ cm-Hz/sup 1/2//W at 250 K. The confining Al/sub x/Ga/sub 1-x/As barrier layers on both sides of stacked QD structure are the key to the high temperature operation.

Keywords

III-V semiconductors; gallium arsenide; high-temperature electronics; indium compounds; infrared detectors; photoconducting devices; semiconductor quantum dots; 2.5 to 7 micrometre; 250 K; III-V semiconductors; InAs-GaAs; QDIP; barrier layers; high temperature operation; photovoltaic-photoconductive mixed-mode device; quantum dot infrared photodetector; specific peak detectivity; Dark current; Gallium arsenide; Infrared detectors; Photoconductivity; Photodetectors; Photovoltaic systems; Quantum dots; Solar power generation; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904391

Filename

904391