Ring Oscillator Based Test Structure for NBTI Analysis

Author

Ketchen, Mark B. ; Bhushan, Manjul ; Bolam, Ronald

Author_Institution

IBM Res., Yorktown Heights

fYear

2007

fDate

19-22 March 2007

Firstpage

42

Lastpage

47

Abstract

We have developed a new NBTI test structure comprising differential pairs of ring oscillators with stages of various circuit types. For stages consisting of inverters driving p-FET passgates, the gates of which are set at an adjustable DC potential, this structure allows high resolution absolute measurement of the average Vt shift of a large number (~ 100) product representative p-FETs in response to very short as well as traditional long duration pure NBTI AC or DC voltage/temperature stresses.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit reliability; integrated circuit testing; oscillators; semiconductor device testing; thermal stability; CMOS integrated circuits; MOSFET; NBTI AC voltage-temperature stresses; NBTI DC voltage-temperature stresses; adjustable DC potential; integrated circuit reliability; negative bias temperature instability; p-FET passgates; ring oscillator based test structure; Circuit testing; Degradation; Frequency measurement; MOSFETs; Niobium compounds; Ring oscillators; Stress measurement; System testing; Titanium compounds; USA Councils; CMOS integrated circuits; Circuit reliability; MOSFETs; circuit modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374452

Filename

4252402