Title :
Application of metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to active-matrix organic light-emitting diode displays
Author :
Zhiguo Meng ; Haiying Chen ; Chengfeng Qiu ; Liduo Wang ; Kwok, H.S. ; Man Wong
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Active matrix (AM) flat-panel displays (FPDs) based on organic light-emitting diodes (OLEDs) are being hotly pursued as alternatives to liquid crystal displays (LCDs). Unlike LC pixels, which are voltage-driven, OLED pixels are current-driven, Since the amorphous silicon (a-Si) thin-film transistors (TFTs) typically used in LCDs suffer from limited current-driving capability and high photosensitivity, polycrystalline silicon (poly-Si) TFTs based on metal-induced unilateral crystallization (MIUC) of a-Si are investigated for AMOLED displays. Particular attention is paid to (1) optimizing TFT structural design and (2) resolving issues related to the integration of MIUC TFT and OLED.
Keywords :
LED displays; crystallisation; driver circuits; elemental semiconductors; flat panel displays; silicon; thin film transistors; AMOLED displays; MIUC; OLED pixels; Si; TFT structural design; active-matrix organic light-emitting diode displays; current-driving capability; flat-panel displays; metal-induced unilaterally crystallized material; polysilicon thin-film transistor; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Amorphous silicon; Crystallization; Design optimization; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Thin film transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904394
