DocumentCode
2886674
Title
New Methodology for the Characterization of EEPROM Extrinsic Behaviors
Author
Medjahed, Djafer ; Yao, Thierry ; Wojciechowski, Dominique ; Gassot, Pierre ; Yameogo, Michael
Author_Institution
AMI Semicond. Belgium BVBA, Oudenaarde
fYear
2007
fDate
19-22 March 2007
Firstpage
59
Lastpage
62
Abstract
In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology.
Keywords
EPROM; semiconductor device models; semiconductor device reliability; semiconductor storage; EEPROM characterization; EEPROM device extrinsic behavior; automotive applications; medical applications; memory devices; semiconductor device reliability; Ambient intelligence; Circuits; EPROM; Error correction codes; Extrapolation; Medical tests; Microelectronics; Semiconductor device reliability; Semiconductor device testing; Voltage; CAST; EEPROM; Semiconductor device reliability; Semiconductor memories; Test structures;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
1-4244-0781-8
Electronic_ISBN
1-4244-0781-8
Type
conf
DOI
10.1109/ICMTS.2007.374455
Filename
4252405
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