• DocumentCode
    2886674
  • Title

    New Methodology for the Characterization of EEPROM Extrinsic Behaviors

  • Author

    Medjahed, Djafer ; Yao, Thierry ; Wojciechowski, Dominique ; Gassot, Pierre ; Yameogo, Michael

  • Author_Institution
    AMI Semicond. Belgium BVBA, Oudenaarde
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    59
  • Lastpage
    62
  • Abstract
    In medical and automotive applications, device reliability needs to be assessed with great precision. It is therefore mandatory to investigate deeply the extrinsic behavior of memory devices to optimize their operating specifications in order to obtain the best endurance and retention characteristics. In this paper, we describe a new methodology to characterize the extrinsic behaviors of EEPROM devices that can be extended to other type of components. We fully describe the architecture of the test structure that we have developed. Finally, we present results that validate this new methodology.
  • Keywords
    EPROM; semiconductor device models; semiconductor device reliability; semiconductor storage; EEPROM characterization; EEPROM device extrinsic behavior; automotive applications; medical applications; memory devices; semiconductor device reliability; Ambient intelligence; Circuits; EPROM; Error correction codes; Extrapolation; Medical tests; Microelectronics; Semiconductor device reliability; Semiconductor device testing; Voltage; CAST; EEPROM; Semiconductor device reliability; Semiconductor memories; Test structures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0781-8
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374455
  • Filename
    4252405