Rapid Characterization of Threshold Voltage Fluctuation in MOS Devices

Author

Agarwal, K. ; Nassif, S. ; Liu, F. ; Hayes, J. ; Nowka, K.

Author_Institution

IBM Corp., Austin

fYear

2007

fDate

19-22 March 2007

Firstpage

74

Lastpage

77

Abstract

We present a technique for fast characterization of random threshold voltage variation in MOS devices. Our Vtau scatter characterization method measures threshold voltage shift by monitoring the change in gate-to-source voltage VGS for a fixed drain current IDs and drain-to-source voltage VDS. We measure VGS variation for a large set of devices arranged in an individually addressable array and report results of Vtau scatter measurement from a test chip in a 65 nm SOI CMOS process. We also measure and report the magnitude of local device current mismatch caused by the Vtau fluctuation.

Keywords

CMOS integrated circuits; MOSFET; arrays; fluctuations; integrated circuit testing; semiconductor device measurement; semiconductor device testing; stochastic processes; system-on-chip; voltage measurement; MOS devices; MOSFET; SOI CMOS process; drain-to-source voltage; fixed drain current; gate-to-source voltage monitoring; individual addressable array; local device current mismatch; random threshold voltage fluctuation characterization; size 65 nm; stochastic distribution; threshold voltage shift; voltage scatter characterization method; Current measurement; Fluctuations; Intrusion detection; MOS devices; Monitoring; Scattering; Semiconductor device measurement; Testing; Threshold voltage; Voltage measurement; MOSFET; Random dopant fluctuation; process variation; test array; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0780-X

Type

conf

DOI

10.1109/ICMTS.2007.374458

Filename

4252408