Title :
Molybdenum metal gate MOS technology for post-SiO/sub 2/ gate dielectrics
Author :
Qiang Lu ; Lin, R. ; Ranade, P. ; Yee Chia Yeo ; Xiaofan Meng ; Takeuchi, H. ; Tsu-Jae King ; Chenming Hu ; Hongfa Luan ; Songjoo Lee ; Weiping Bai ; Choong-Ho Lee ; Dim-Lee Kwong ; Xin Guo ; Xiewen Wang ; Tso-Ping Ma
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si/sub 3/N/sub 4/, ZrO/sub 2/ and ZrSiO/sub 4/ was verified by good carrier mobility agreement with the universal mobility model.
Keywords :
MOSFET; carrier mobility; dielectric thin films; molybdenum; work function; Mo; Si/sub 3/N/sub 4/; ZrO/sub 2/; ZrSiO/sub 4/; carrier mobility; gate dielectric; molybdenum metal gate MOS technology; p-MOSFET; thermodynamic stability; universal mobility model; work function; Annealing; CMOS process; CMOS technology; Dielectric materials; Inorganic materials; MOS devices; MOSFET circuits; Thermal stability; Thermodynamics; Tin;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904401
