DocumentCode
2886775
Title
Buried all-epitaxial microcavity for cavity-QED with quantum dots
Author
Muller, A. ; Shih, C.K. ; Lu, D. ; Ahn, J. ; Gazula, D. ; Quadery, S. ; Freisem, S. ; Deppe, D.G.
Author_Institution
Dept. of Phys., Univ. of Texas at Austin, Austin, TX
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
Keywords
crystal microstructure; epitaxial growth; microcavity lasers; quantum electrodynamics; semiconductor quantum dots; Purcell effect; buried all epitaxial microcavity; cavity QED; lasing action; mode imaging; optical characterization; quantum dots; Atom optics; Epitaxial growth; Etching; Gallium arsenide; Isolation technology; Microcavities; Physics; Q factor; Quantum dots; Semiconductor device manufacture; (220.4000) Microstructure fabrication; (270.5580) Quantum Electrodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4629161
Filename
4629161
Link To Document