A novel SiGe-inserted SOI structure for high performance PDSOI CMOSFETs

Author

Bae, G.J. ; Choe, T.H. ; Kim, S.S. ; Rhee, H.S. ; Lee, K.W. ; Lee, N.I. ; Kim, K.D. ; Park, Y.K. ; Kang, H.S. ; Kim, Y.W. ; Fujihara, K. ; Kang, H.K. ; Moon, J.T.

Author_Institution

Samsung Electron. Co., Kyunggi-Do, South Korea

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

667

Lastpage

670

Abstract

A novel partially-depleted silicon-on-insulator (PDSOI) CMOSFETs with SiGe-inserted layer have been proposed. The SiGe-inserted layer in NMOS successively suppresses the floating body effects (FBE) by lowering the body-to-source potential barrier to hole current. It also provides a good current performance in PMOS by inducing the change of channel dopant distribution and increasing the efficiency of pocket ion implantation. Consequently, SiGe-inserted SOI devices achieve higher drain-to-source breakdown voltage in NMOS due to the suppression of FBE and increase drive currents of both NMOS and PMOS by 10% and 15%, respectively, compared to conventional PDSOI devices.

Keywords

Ge-Si alloys; MOSFET; doping profiles; ion implantation; semiconductor device breakdown; silicon-on-insulator; NMOS; PDSOI CMOSFET; PMOS; SiGe-inserted SOI structure; body-to-source potential barrier; channel dopant distribution; drain-to-source breakdown voltage; drive current; floating body effect; hole current; pocket ion implantation; CMOS process; CMOS technology; CMOSFETs; Germanium silicon alloys; Ion implantation; MOS devices; MOSFETs; Silicon germanium; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904407

Filename

904407