• DocumentCode
    2886869
  • Title

    Modeling the Mismatch of High-k MIM Capacitors

  • Author

    Marin, Mathieu ; Cremer, Sebastien ; Giraudin, Jean-Christophe ; Martinet, Bertrand

  • Author_Institution
    STMicroelectron., Crolles
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    115
  • Lastpage
    119
  • Abstract
    In this contribution we investigate the matching properties of modern high-k metal-insulator-metal (MIM) capacitors. In particular, we derive a compact physics-based model in order to explain the observed geometry dependence of mismatch. This model is successfully applied to MIM devices processed with Ta2O5 and AI2O3 as dielectrics.
  • Keywords
    MIM devices; aluminium compounds; capacitors; dielectric materials; tantalum compounds; Al2O3; Ta2O5; compact physics-based model; dielectric MIM capacitors; high-k MIM capacitors; modern high-k metal-insulator-metal capacitors; Capacitance; Dielectric devices; Geometry; High K dielectric materials; High-K gate dielectrics; MIM capacitors; MIM devices; MOS capacitors; Solid modeling; Testing; MIM; Mismatch; capacitors; high-k dielectrics; matching; modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0780-X
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374466
  • Filename
    4252416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2886869