High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

Author

Furumiya, M. ; Ohkubo, H. ; Muramatsu, Y. ; Kurosawa, S. ; Nakashiba, Y.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

701

Lastpage

704

Abstract

A high-photosensitivity and no-cross-talk pixel technology has been developed for an embedded active-pixel CMOS image sensor using a 0.35-/spl mu/m CMOS logic process. To increase photosensitivity, we developed a deep low-concentration p-well (deep p-well) photodiode. To suppress pixel cross-talk caused by obliquely incident light, a double-metal photoshield was used. The cross-talk caused by electron diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-inch 330 k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nm incident light was obtained.

Keywords

CMOS image sensors; crosstalk; photodiodes; sensitivity; 0.33 inch; 0.35 micron; 330 kpixel; 550 nm; crosstalk; deep p-well photodiode; double-metal photoshield; electron diffusion; embedded active-pixel CMOS image sensor; sensitivity; CMOS image sensors; CMOS logic circuits; CMOS technology; Circuit noise; Crosstalk; Image sensors; Noise reduction; Photodiodes; Pixel; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904415

Filename

904415