Title :
Excess Base Current Model for Gamma-Irradiated SiGe Bipolar Transistors
Author :
Ullán, M. ; Alegre, J.P. ; Dìez, S. ; Pellegrini, G. ; Campabadal, F. ; Lozano, M. ; Lora-Tamayo, E.
Author_Institution :
Centra Nacional de Microelectron. (CNM-CSIC), Barcelona
Abstract :
The radiation hardness of advanced SiGe BiCMOS technologies is being evaluated in order to check their applicability for the front-end readout electronics of the ATLAS Upgrade in the framework of the Super-LHC at CERN. A model that describes the effect of ionizing radiation on bipolar transistors as an exponential term is widely accepted. Nevertheless, this model is not very precise in the bias ranges of interest for these applications. We propose a new empirical model that, by the addition of one extra parameter to the classical exponential model, describes more accurately the ionization radiation effects on SiGe bipolar transistors in the range of interest.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; gamma-ray effects; heterojunction bipolar transistors; nuclear electronics; radiation hardening (electronics); readout electronics; semiconductor device models; ATLAS upgrade; BiCMOS technologies; HBT; SiGe; Super-LHC framework; base current model; classical exponential model; empirical model; front-end readout electronics applications; gamma-irradiated SiGe bipolar transistors; ionizing radiation effects; radiation hardness; semiconductor device modeling; BiCMOS integrated circuits; Bipolar transistors; Gamma rays; Germanium silicon alloys; Ionization; Iron; Microelectronics; Silicon germanium; Temperature; Testing; Gamma radiation; SiGe; SiGe HBT; bipolar transistors; hardness assurance; ionization damage; radiation effects; reliability modeling; semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374475
