Advanced model and analysis for series resistance in sub-100 nm CMOS including poly depletion and overlap doping gradient effect

An advanced series resistance model is developed for characterizing a heavily doped shallower source/drain extension (SDE), polysilicon gate depletion effects, doping gradient effect in SDE to gate overlap region, relatively enlarged sidewall length, a silicide-diffusion contact system, and a high-/spl kappa/ dielectric sidewall. The proposed model predicts that silicide-diffusion contact resistance and overlap resistance will be major components in total series resistance of future scaled sub-100 nm MOSFETs, The series resistance can be dramatically reduced through controlling both abruptness of SDE profile and silicide Schottky barrier engineering.