DocumentCode :
2887153
Title :
Reliability evaluation of power semiconductor devices using coupled analysis simulation
Author :
Shinohara, Kazunori ; Yu, Qiang
Author_Institution :
Adv. Power Electron. Project, Kanagawa Acad. of Sci. & Technol., Kawasaki, Japan
fYear :
2010
fDate :
2-5 June 2010
Firstpage :
1
Lastpage :
9
Abstract :
There is an increasing need to fabricate power devices that are lightweight and compact. However, reducing the weight of power devices would result in reduced stiffness, and greater compactness would result in increased current density, which, in turn, would increase the temperature of the device and cause deterioration. Thus, to realize lightweight, compact power devices with sufficient reliability, multiphysics fatigue analysis techniques that simultaneously consider electricity, heat, and stress should be developed. In the present paper, to accurately predict the fatigue properties of power devices, evaluation techniques based on multiphysics analysis are proposed. By using a multiphysics algorithm and comparing lead frame bonding to wire bonding found in literature, the reliability of lead frame bonding is estimated.
Keywords :
fatigue; lead bonding; power semiconductor devices; semiconductor device reliability; coupled analysis simulation; fatigue properties; multiphysics algorithm; multiphysics fatigue analysis techniques; power semiconductor devices; reliability evaluation; wire bonding; Aluminum; Analytical models; Bonding; Copper; Fatigue; Heat sinks; Power semiconductor devices; Semiconductor device reliability; Silicon; Wire; Fatigue Life Cycle; Finite Element Method; Multiphysics; Solder;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2010 12th IEEE Intersociety Conference on
Conference_Location :
Las Vegas, NV
ISSN :
1087-9870
Print_ISBN :
978-1-4244-5342-9
Electronic_ISBN :
1087-9870
Type :
conf
DOI :
10.1109/ITHERM.2010.5501267
Filename :
5501267
Link To Document :
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