SiGe bipolar technology for mixed digital and analogue RF applications

Author

Bbck, J. ; Meister, T.F. ; Knapp, H. ; Zoschg, D. ; Schafer, H. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Franosch, M. ; Stengl, R. ; Schreiter, R. ; Rest, M. ; Treitinger, L.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

745

Lastpage

748

Abstract

A SiGe bipolar technology with a low-resistivity base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 85 GHz, a maximum oscillation frequency of 128 GHz, 6.8 ps gate delay, and a minimum noise figure of 1.2 dB at 10 GHz demonstrate balanced transistor performance. With an 88 GHz dynamic frequency divider and a 12 GHz low noise amplifier with 1.9 dB noise figure, state-of-the-art results for digital as well as analogue applications are achieved.

Keywords

Ge-Si alloys; UHF integrated circuits; bipolar MMIC; delays; mixed analogue-digital integrated circuits; semiconductor materials; 1.2 dB; 1.9 dB; 10 GHz; 12 GHz; 128 GHz; 6.8 ps; 85 GHz; 88 GHz; SiGe; balanced transistor performance; bipolar technology; double-polysilicon self-aligned transistor; dynamic frequency divider; gate delay; low noise amplifier; low-resistivity base; maximum oscillation frequency; mixed digital and analogue RF applications; transit frequency; Boron; Circuits; Delay; Epitaxial growth; Frequency conversion; Germanium silicon alloys; Noise figure; Radio frequency; Silicon germanium; Vehicle dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904425

Filename

904425