Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium

Author

Yee-Chia Yeo ; Qiang Lu ; Tsu-Jae King ; Chenming Hu ; Kawashima, T. ; Oishi, M. ; Mashiro, S. ; Sakai, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

753

Lastpage

756

Abstract

We report the demonstration of a novel sub-100 nm CMOS technology with strained-Si/sub 0.76/Ge/sub 0.24//Si heterostructure channels formed by ultra-high-vacuum chemical-vapor-deposition (UHV-CVD). The incorporation of 24% Ge in the channel provides a 25% enhancement in PMOSFET drive current for channel lengths down to 0.1 /spl mu/m. Enhancement in NMOSFET drive current is concomitantly observed for channel lengths below 0.4 /spl mu/m.

Keywords

Ge-Si alloys; MOSFET; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 0.1 to 0.4 micron; CMOSFETs; NMOSFET drive current; PMOSFET drive current; SiGe-Si; channel lengths; strained epitaxial heterostructure channels; ultra-high-vacuum chemical-vapor-deposition; CMOS process; CMOS technology; CMOSFETs; Chemical technology; Fabrication; Germanium silicon alloys; MOS devices; MOSFET circuits; Silicon germanium; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904427

Filename

904427