Title :
High performance digital-analog mixed device on an Si substrate with resistivity beyond 1 k/spl Omega/ cm
Author :
Ohguro, T. ; Ishikawa, T. ; Kimura, T. ; Samata, S. ; Kawasaki, A. ; Nagano, T. ; Yoshitomi, T. ; Toyoshima, T.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
High performance digital-analog mixed devices are fabricated on a high resistivity MCZ Si substrate with low oxygen in order to suppress substrate noise from digital to analog circuits. The low oxygen prevents substrate resistivity reduction due to thermal donor occurring during device fabrication process. Good characteristics of digital, analog and power amplifiers can be realized by optimizing the process of oxynitride, halo implantation and salicide. In 0.11 /spl mu/m CMOS, high drivability, that is, 770 /spl mu/A//spl mu/m for NMOS and 330 /spl mu/A//spl mu/m for PMOS was achieved at Ioff=10/sup -9/ A//spl mu/m. And fT value of 90 GHz for NMOS and 48 GHz for PMOS can be achieved. Additionally, high efficiency of 68% at 2 GHz operation can be realized in power amplifier with 0.30 /spl mu/m gate length.
Keywords :
CMOS integrated circuits; UHF integrated circuits; integrated circuit metallisation; integrated circuit noise; mixed analogue-digital integrated circuits; nitridation; power amplifiers; 0.11 micron; 0.30 micron; 2 GHz; 48 GHz; 68 percent; 90 GHz; CMOS; Si; device fabrication process; digital-analog mixed device; drivability; efficiency; halo implantation; oxynitride process; power amplifier; salicide; substrate noise; substrate resistivity reduction; thermal donor; Analog circuits; Circuit noise; Conductivity; Digital-analog conversion; Fabrication; High power amplifiers; MOS devices; Operational amplifiers; Power amplifiers; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904428
