• DocumentCode
    2887237
  • Title

    The rectangular bipolar transistor tetrode structure and its application

  • Author

    Schroter, M. ; Lehmann, S.

  • Author_Institution
    Univ. of California at San Diego, La Jolla
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    206
  • Lastpage
    209
  • Abstract
    The operation of rectangular-shaped bipolar tetrode structures as well as the proper evaluation of measured data from such structures are discussed. Based on device simulation, which also serves for verification purposes, guidelines for the layout and for measurement data correction are presented. The application to experimental data is demonstrated.
  • Keywords
    bipolar transistors; semiconductor device models; tetrodes; device simulation; measurement data correction; rectangular bipolar transistor tetrode structure; Bipolar transistors; Electrical resistance measurement; Geometry; Integrated circuit measurements; Monitoring; Process control; Radio frequency; Solid modeling; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0781-8
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374484
  • Filename
    4252434