Evaluation of 300 mm High Resistivity SOI UNIBOND material for RF applications up to millimeter wave using 65 nm CMOS SOI technology

Author

Gianesello, Frederic ; Raynaud, C. ; Gloria, D. ; Boret, S. ; Ghyselen, B. ; Mazure, C.

Author_Institution

STMicroelectron., Crolles

fYear

2007

fDate

19-22 March 2007

Firstpage

210

Lastpage

213

Abstract

In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of resistivity homogeneity all over the wafer, of 300 mm wafer provided by SOITEC and to offer a benchmarking with well known 200 mm material. For this purpose a methodology based on high frequency measurement is proposed.

Keywords

CMOS integrated circuits; electric resistance measurement; field effect MIMIC; integrated circuit measurement; silicon-on-insulator; CMOS SOI technology; RF applications; SOITEC; Si-SiO₂; high frequency measurement methodology; high resistivity SOI UNIBOND material; insulating behavior; integrated inductor; millimeter wave function; on-wafer measurement; resistivity homogeneity terms; size 300 mm; size 65 nm; CMOS technology; Conductivity; Electrical resistance measurement; Frequency measurement; Millimeter wave measurements; Millimeter wave technology; Performance evaluation; Radio frequency; Semiconductor materials; Testing; 300 mm wafer; High Resistivity; Millimeter Wave; Radio Frequency; SOI; UNIBOND; integrated inductor; on-wafer measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on

Conference_Location

Tokyo

Print_ISBN

1-4244-0781-8

Electronic_ISBN

1-4244-0781-8

Type

conf

DOI

10.1109/ICMTS.2007.374485

Filename

4252435